How Can ZEISS's Failure Analysis Correlative Workflow Help You?

Need to perform non-destructive imaging? XRMs allow for non-destructive imaging of delicate electronic components, providing crucial insights into the root cause of failures without damaging the sample. This technology is essential for improving the reliability and efficiency of semiconductors, making it an invaluable tool for the industry.

Focused Ion Beam Scanning Electron Microscopes (FIB-SEMs) are a combination of two powerful microscopic techniques and are widely used in the semiconductor failure analysis process. These microscopes use a focused beam of ions to cut thin slices of a sample, which are then imaged using a scanning electron microscope.

The ion beam also allows site-specific physical analysis of the sample, including milling, doping, and compositional analysis. This ability to analyze specific regions of the sample makes FIB-SEMs essential tools for identifying the root cause of semiconductor failures and for optimizing device performance.

Broad Ion Beam Scanning Electron Microscopes (BIB-SEMs) are widely used in the semiconductor failure analysis process for mechanical polishing. These microscopes use a broad ion beam to remove material from the surface of a sample in a controlled manner, which allows for preparation of the sample surface for imaging with a scanning electron microscope. The broad ion beam provides a homogeneous material removal, resulting in a polished and uniform surface that is suitable for high-resolution imaging and analysis.

BIB-SEMs are particularly useful in the semiconductor failure analysis process as they allow for the removal of surface damage, which can obscure the underlying cause of a failure. By mechanically polishing the surface of a sample, BIB-SEMs enable detailed imaging and analysis of the underlying materials and structures, facilitating the identification of the root cause of a failure.