This webinar explores the latest advancements in semiconductor packaging architecture, focusing on the challenges presented by increased density and feature scaling in the More-than-Moore era. As packaging footprints expand to support heterogeneous integration, traditional methods of failure analysis and process characterization face limitations. This session highlights two powerful techniques gaining momentum in the industry: 3D X-Ray Microscopy (XRM) and laser-integrated focused ion beam scanning electron microscopy (FIB-SEM). By integrating 3D XRM as a guide for laser-assisted FIB-SEM workflows, engineers can achieve precise targeting and analysis of subsurface features with enhanced throughput. Attendees will gain insights into a novel, high-efficiency workflow that combines 3D XRM with fs-laser integrated FIB-SEM to address the complexities of advanced package failure analysis, setting a new standard for precision and speed in semiconductor inspection.

This whitepaper discusses the challenges of imaging and characterizing modern semiconductor packages as the boundary between packaging and silicon interconnect technologies continues to blur. With decreasing package interconnect dimensions, higher-resolution imaging is essential for defect localization and structure analysis throughout the packaging lifecycle, from design and development to production and diagnostics. The complexity of heterogeneous integration and multi-die packages requires rapid, precise solutions for characterizing structures, defects, and processes to meet stringent electrical, mechanical, and reliability standards. This paper highlights cutting-edge advancements in artificial intelligence (AI) for 3D X-ray microscopy (XRM), enabling non-destructive, submicron-resolution imaging, and introduces new focused ion beam (FIB) microscopes equipped with an integrated fs-laser for fast and accurate analysis of deeply buried features in complex semiconductor packages.

This whitepaper introduces an innovative workflow for enhanced imaging and analysis of semiconductor devices, addressing the limitations of traditional sample preparation methods like mechanical lapping and broad ion beam (BIB) milling in high-resolution physical failure analysis (FPA). As semiconductor designs grow more complex with multi-chip stacking and heterogeneous integration, traditional methods struggle to provide the cross-sectioning accuracy and undistorted surfaces required for analyzing nanometer-scale structures. This paper outlines a correlative workflow using 3D X-ray microscopy (XRM) for non-destructive imaging, enabling submicron precision mapping of package structures. It also presents a proprietary micromachining process that delivers deformation-free surfaces for scanning electron microscopy (SEM), significantly improving the reliability of fault detection in advanced FPA workflows.

This report introduces an innovative, ion beam-based method for preparing cross-section samples with MCS Perfect Edge™ and Perfect Edge 3D™, resulting in deformation-free surfaces that enable high-resolution, high-magnification analysis of nanometer-scale features across large samples and support comprehensive forensic analysis of various material combinations, including soft, hard, thick, and thin layers, with capabilities for 3D surface and cross-section examination to reveal failure mechanisms accurately.