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Microscopy Solutions For Semiconductor Failure Analysis

Accelerate your semiconductor packaging failure analysis

Transform your workflows with best-in-class imaging, efficient sample preparation and characterization with ZEISS microscopy solutions
  • Transform X-ray microscopy mitigating sample size limitations with advanced architecture and deep learning for high resolution, large field of view and high throughput
  • Reduce turnaround time from days to hours using integrated laser FIB for high throughput and precisely targeted sample preparation
  • Simplify imaging and analysis with Gemini technology, where high-resolution electron microscopy meets ease of use

ZEISS workflow solutions

Here's how we can help

Fault isolation and physical analysis workflows have seen new challenges with the advances in semiconductor packaging technology.
Innovative connected workflows and correlative solutions from ZEISS address some of these new challenges and increase throughput and success rate.

Site-Specific Failure Analysis
Site-specific sample preparation guided by the X-ray data using the laser-integrated FIB-SEM enables fast and precise sample preparation. This workflow is tailored to enhance productivity and turnaround time within minutes compared to hours.

Routine Imaging and Analysis
Sample preparation using conventional mechanical polishing and broad ion beam milling is still relevant for several cases. The optical and X-ray imaging data can be used to direct sample preparation and fed to the ZEN software for fast and easy navigation in ZEISS electron microscopes for routine inspection and analysis

Workflow 1 | Site-Specific Failure Analysis

Site-Specific Failure Analysis Workflow

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    XRM Scan Micro Bumps

    3D X-Ray Microscopy

    X-Ray microscope used to non-destructively image a PoP and identify a feature of interest such as microbump for analysis.

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    Correlate by Sample-Centric Fiducials

    Femtosecond Laser Ablation

    PoP sample has fiducial markers on the surface which are used as reference to identify target microbump located sub-surface. Laser is used to remove more than 1 x 1 x 1 mm3 in less than 10 minutes to access microbump

  • LaserFIB workflow for massive material ablation

    FE-SEM Imaging

    Target region of interest is polished using the focused ion beam in less than 20 minutes to generate a cross-section of the microbump for further SEM imaging and analysis.

Technology Bundle

Download the Site-Specific Failure Analysis Workflow Bundle

The bundle consists of whitepapers and webinars for a deep dive into the technology behind the workflow.

Download

Workflow 2 | Routine Imaging and Analysis

Routine Imaging and Analysis

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    3D X-ray scan of the SiP to identify and localize various components

    3D X-Ray Microscopy

    Firstly, a semiconductor package is imaged with high-resolution 3D XRM, and regions of interest are defined at submicron accuracy.

  • Sample preparation

    Secondly, using the acquired 3D X-ray data, a proprietary sample cross-sectioning process Perfect Edgetm follows to generate accurate and distortion-free surfaces. 

    Below, this report introduces an ion beam-based method, MCS Perfect Edge™ and Perfect Edge 3D™, to prepare deformation-free cross-section samples, allowing high-resolution analysis of nanometer-scale features across diverse materials and enabling accurate forensic failure analysis.

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    Automated imaging of the wire bond.

    FE-SEM Imaging

    Thirdly, the prepared surface is imaged and analyzed with FE-SEM.

Technology Bundle

Download the Routine Imaging and Analysis Workflow Bundle

The bundle consists of whitepapers and webinars for a deep dive into the technology behind the workflow.

Download

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Both workflows are enabled by these three microscopes

Click on the solution below to find out more about the specific microscopes.