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This whitepaper introduces a groundbreaking workflow for the imaging and analysis of semiconductor devices, addressing limitations in traditional sample preparation methods like mechanical lapping and broad ion beam (BIB) milling. As semiconductor designs grow more complex with multi-chip stacking and heterogeneous integration, traditional methods struggle to provide the cross-sectioning accuracy and undistorted surfaces required for high-resolution scanning electron microscopy (SEM). This paper presents a novel correlative workflow using non-destructive 3D X-ray microscopy (XRM) to generate submicron-accurate 3D maps, minimizing the risk of missing or damaging fault regions. Additionally, it showcases a proprietary micromachining process for creating deformation-free surfaces, enhancing precision and reliability in physical failure analysis (PFA).

 

Learn how MCS Labs uses ZEISS FE-SEM for failure forensics

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