Advanced Imaging & Characterization Techniques for Semiconductor & Materials Science Research

Ronn Goei is part of the APAC Product, Application, and Sales Specialist Team in charge of Electron Microscopy (Materials Research). He obtained his PhD from Nanyang Technological University (Singapore) in Environmental Chemistry. He was formerly Senior Research Fellow at the School of Materials Science and Engineering (NTU Singapore).

Ronn has published more than 80 International Peer-Reviewed Journal articles and actively serves as a reviewer in various international Journals published by Elsevier, ACS, Springer, and MDPI. He has taught both at undergraduate and postgraduate level at NTU Singapore and James Cook University Singapore.

He is actively involved in various research collaboration with overseas universities including Universiti Malaya, Universitas Sumatera Utara, Universitas Sari Mutiara Indonesia, Universitas Negeri Medan, Universitas Diponegoro, Universitas Andalas and other universities. His research expertise include applied catalysis, environmental chemistry, advanced materials characterization, and materials science.

X-ray Computed Tomography (CT) enables non-destructive analysis of internal semiconductor microstructures, crucial for failure analysis (FA). ZEISS’ X-ray Microscopes (XRM) use synchrotron technology to capture high-resolution 3D images, detecting buried defects at sub-micron scales. Deep-learning reconstruction enhances imaging efficiency, reducing acquisition time while preserving crucial defect details. This approach outperforms conventional techniques, improving signal extraction from low-dose data for advanced failure analysis.

Cheng Liang is an ex-failure analysis engineer from the semiconductor industry, specializing in automotive chips such as MCU, MEMS and ASIC. He has hands-on experience in SEM/EDX, FIB cross section, FIB circuit editing, sample preparation and de-processing (from package level to ready for nanoprobing), micro probing, AFP and SEM-based nanoprobing.

As modern electronic circuits from the die level to the package level become increasingly complex and shrink, electrical characterization becomes increasingly challenging. The "hotspots" resulting from optical fault isolation (OFI) techniques such as OBIRCH and Photo Emission Microscopy(PEM) are often too large to pinpoint the exact defect location - especially for transistors manufactured using the latest technology nodes. Crosstalk during Laser Voltage Probing (LVP) is also becoming more apparent, especially for nodes below 20nm. SEM-based nanoprobing has become a required complementary step to existing OFI techniques to further improve fault isolation before applying subsequent physical processes for root cause analysis.

Greg is a Senior Application Development Engineer in the Electronics Sector of ZEISS Microscopy and a senior IEEE member. With over 20 years of experience in semiconductor process development and failure analysis, Greg brings a wealth of experience to his role. Previously at IBM, he contributed to ceramic packaging process development and led FEOL defect localization efforts across multiple technology nodes, developing advanced failure analysis techniques. At ZEISS, Greg works with failure analysis engineers worldwide to advance SEM, FIB-SEM, and AFM techniques for semiconductor process development.

Nanoprobing provides a wealth of opportunities for interrogating various properties of semiconductor devices and electronic materials. This talk will cover some of the electron-beam-based techniques that are possible in nanoprobing. We will cover Passive Voltage Contrast (PVC), Electron Beam Absorbed Current (EBAC), Electron Beam Induced Current (EBIC), and Electron Beam Induced Resistance Change (EBIRCH). For each technique, a brief introduction to the physics of generation, as well as practical example images, will be given.

Dr. Vignesh Viswanathan is the General Manager of Raith Asia Limited. Prior to Raith, he was an applications specialist and a business development manager with Carl Zeiss supporting the semiconductor market segment in the microscopy business unit. Vignesh holds a PhD in Electrical Engineering from National University of Singapore. His research focused on building electron microscopes to image localized electric fields in plasmonic devices and nanofabrication and lithography of metallic nanostructures using ion beams.

Integrating RAITH Elphy pattern generators with ZEISS electron optical and ion beam systems transforms standard microscopes into advanced lithography platforms. By leveraging beam current stability, high performance electron optics and powerful software for precise control this setup enables complex nanopatterning for photonics, nanoelectronics, and 2D materials. This talk explores how combining these technologies empowers multidisciplinary laboratories to tackle challenging nanofabrication tasks.

Jonathan is a research engineer at the National University of Singapore, focusing on atom probe tomography and advanced metallurgy. He graduated from Nanyang Technological University with a bachelor’s in Materials Science and Engineering in 2024 and since 2025 has been the NUS ADAPT (Analytical Defect APT) Lab manager,

Atom Probe Tomography (APT) has emerged as a powerful nanoscale metrology technique capable of delivering three-dimensional, near-atomic resolution chemical mapping across diverse material systems. This talk highlights the capabilities of the NUS INVIZO 6000 APT within a microscopy workflow inclusidng FIB and TEM. Applications spanning different material systems illustrating APT’s versatility in resolving composition, interfaces, and nanoscale heterogeneities will be discussed. Practical considerations in specimen preparation, data interpretation, and multimodal integration will also be discussed to demonstrate how APT complements established characterization techniques.