New materials and semiconductor technologies are advancing the performance of next-generation electronics. Fast and accurate failure analysis becomes more important than ever for all product life cycle stages – from R&D to yield improvement to field returns. ZEISS offers advanced 2D and 3D imaging solutions for front-end and back-end processes. Please visit booth #A8 at IPFA to speak with our team about our unique X-ray, FE-SEM and FIB-SEM microscopy solutions for failure analysis and process development.

Discover how GeminiSEM FE-SEM enables ultra-low voltage surface imaging and large field-of-view nanoprobing for your most demanding imaging and analytical tasks. See how Xradia 3D X-ray microscopes powered by artificial intelligence deliver faster scan times with images that look better than ever. Explore how Crossbeam FIB-SEM achieves single-digit-nm 3D resolution for failure analysis, constructional analysis, or metrology of the smallest logic and memory structures. Learn about our breakthrough Crossbeam laser FIB-SEM for rapid nanoscale imaging of deeply buried features in stacked die and packages and high-resolution real-time SEM control for lamella preparation.
 

Monday, July 15
Workshop A: Package Level Failure Analysis
Title: Leveraging Nano-Probing Technology for Semiconductor Device Characterization– 16.45 - 17.15
Infineon Technologies Dr Yeoh Lai Seng

Workshop B: Machine Learning and Novel Analysis Methodologies for Improved Productivity
Title: AI-Powered 3D X-ray Microscopy for Semiconductor Package Development and Failure Analysis – 16.15 - 16.45
ZEISS USA Dr Allen Gu

ZEISS Dinner
Hopscotch - 19.30 - 23.00
Come to the ZEISS booth to register your attendance

Tuesday, July 16
Selected as ISTFA 2023 Exchange Paper
Title: Assessing Electronics with Advanced 3D X-ray Microscopy Techniques
Plenary Session OPE4 – 08.30 - 10.20
ZEISS USA Herminso Villarage Gomez

Thursday, July 18
Sample Preparation, Metrology and Defect Characterization
Slot 5A: Capacitive Coupling Voltage Contrast Contribution to PVC in Advanced SRAMs – 11.00 - 12.00
ZEISS USA G. M. Johnson