Accelerate your Failure Analysis and Process Characterization

The ZEISS GeminiSEM series excels in immersion field-free imaging at ultra-low voltages, making it the ideal platform for nanoprobing and characterizing transistors without altering their properties. With the capability to clearly visualize 3nm or 5nm chip lines at voltages as low as 100-200V, ZEISS GeminiSEM enhances needle positioning accuracy during nano-probing. The low electric and magnetic fields on the specimen provide high sample flexibility and optimal performance, allowing for precise analysis and characterization of advanced semiconductor devices. This significantly improves the reliability and effectiveness of the failure analysis process.

ZEISS GeminiSEM's immersion-free optics ensure no perturbation during electronic property measurements. Its low voltage, high-resolution performance is perfect for beam-sensitive advanced node devices. Additionally, it boasts the most stable beam current in the industry, ensuring precision in electrical property measurements.

Navigating to a location in an SEM after identifying defects or targeted structures in a light microscope (LM) can be challenging because LM reveals internal structures while SEM primarily provides information about surface morphology. This challenge adds operational complexity and affects cycle time and throughput in physical failure analysis workflows. ZEISS Correlative Microscopy between LM and SEM solves this problem by enabling one-click navigation in SEM using a super high-resolution LM image. This approach significantly reduces operational complexity and improves cycle time and throughput.

Imaging photoresists can be challenging due to shrinkage when exposed to an electron beam. This issue can be countered by using ultra low kV for imaging photoresist materials, as reducing the imaging voltage minimizes beam-induced shrinkage. However, this often comes at the cost of reduced image quality. ZEISS GeminiSEM's superior low kV imaging capabilities solve this problem by providing industry-leading low kV imaging, making GeminiSEM the perfect tool for process characterization of photoresists and other beam-sensitive samples. This ensures high-quality imaging while preserving the integrity of delicate materials, enhancing the reliability and accuracy of your analysis.

Contamination can significantly degrade image quality in low kV imaging, limiting the achievable resolution. To address this issue, ZEISS FE-SEM systems feature a Plasma Cleaner that effectively combats contamination. The Plasma Cleaner enhances image quality by increasing the achievable resolution through efficient decontamination. It provides fast specimen decontamination, typically taking only 2 to 10 minutes for most samples. Additionally, it offers a thorough decontamination of the stage and chamber, which can be completed in 5 to 60 minutes. The plasma cleaning process is entirely safe for the equipment, including sensitive detectors, ensuring that your system remains in optimal condition while delivering superior imaging performance.

Unlike other industries, the semiconductor industry is evolving at an unprecedented pace. For this fast-evolving industry, quick and effective responses with advanced solutions and technology are essential to achieve desired results faster and more efficiently. Recognizing the unique challenges in semiconductor analysis, our Solutions Lab provides custom solutions tailored just for you.

Whether it's automation workflows or specific image analysis, we're here to support you in tackling your most complex problems, ensuring peak lab efficiency. We specifically offer end-to-end microscope automation workflows encompassing AI-driven feature detection, navigation, imaging, metrology, and data management. Our comprehensive approach ensures that every aspect of your microscopy needs is covered, allowing you to maximize the potential of ZEISS systems and stay ahead in the dynamic semiconductor landscape.