ZEISS Crossbeam - FIB-SEM for High Throughput 3D Analysis and Sample Preparation

Semiconductor Failure Analysis

ZEISS Crossbeam Laser

FIB-SEM for high throughput sample preparation and nanoscale imaging

Parallel advances in FIB-SEM and ultra-fast lasers have radically changed sample preparation, characterization and failure analysis of semiconductor devices and packages.

Speed up sample preparation by integrating a femtosecond laser onto a FIB-SEM
Achieve unprecedented speed and versatility in accessing deep and buried regions of interest, enabling detailed structural analysis across various sample types
Target multiple ROIs with integrated automated movements with high accuracy and speed
Unlock new approaches to provide greater insights into semiconductor package research, development and failure analysis

Further enhance your productivity

With X-ray guided connected workflow

Download the correlative workflows for advanced packaging failure analysis

For efficient sample preparation

Addition of a femtosecond laser to the ZEISS Crossbeam FIB-SEM improves the material removal rates up to 15 mio µm³ per second.

Sample preparation is efficient with minimal heat-affected zone due to the ultrashort pulse duration of the femtosecond laser.

This reduces sample preparation from hours or days to minutes without any artifacts. The laser preparation is suitable for several materials including silicon carbide and glass.

Download free ZEISS Crossbeam bundle