Clarity at Low Voltage Confidence at Every Layer

From passive voltage contrast to nanoprobing and defect localization, GeminiSEM 560 delivers high-resolution imaging on the most challenging semiconductor materials, without compromising surface integrity.

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Sub-nanometer surface clarity at 1 kV using inlens detection. No artifacts. No compromise. Sub-nanometer surface clarity at 1 kV using inlens detection. No artifacts. No compromise. — Sub-nanometer surface clarity at 1 kV using inlens detection. No artifacts. No compromise.

Clarity at Low Voltage

Confidence at Every Layer

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7 nm SRAM array imaged with Z and topographical contrast. Subtle failures require real surface sensitivity.

The Problem Isn’t Finding the Defect

It’s Seeing It Clearly

In today’s semiconductor FA labs, surface sensitivity and material complexity are increasing faster than most imaging systems can handle.

Key challenges:

Shrinking feature sizes across 3D architectures
Beam-sensitive layers such as photoresists and low-k dielectrics
ESD-related damage and delamination in stacked devices
Need for non-destructive inspection at high contrast and low voltage

Every inaccurate scan increases turnaround time, jeopardizes yields, or leads to misdiagnosed failures.

Built to perform where other SEMs stall

especially at low voltage

	What it means for FA
<1 nm resolution at 1 kV	Resolves nanostructures and charge-sensitive layers without coating
Immersion-free optics	Avoids magnetic interference during voltage contrast or nanoprobing
Stable low-kV beam	Maintains clarity on photoresist, BEOL structures, and uncoated surfaces
Dual inlens plus SE2 detection	Provides high material and topographical contrast in complex packages
ZEN Connect and SmartSEM	Integrates cleanly across SEM, FIB, TEM, and analytics tools
Modular platform	Supports cryo, EBAC, EBIC, TKD, and analytical extensions